HXY MOSFET · FETs & Power MOSFETs · MPN IPD068P03L3G-HXY
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| Output Capacitance(Coss) | 255pF |
|---|---|
| Pd - Power Dissipation | 90W |
| Gate Charge(Qg) | 60nC@10V |
| Configuration | Standalone |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.45nF |
P-Channel 30V 80A 31.2W Surface Mount TO-252-2L