HXY MOSFET · FETs & Power MOSFETs · MPN IPD042P03L3G-HXY
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| Output Capacitance(Coss) | 820pF |
|---|---|
| Pd - Power Dissipation | 100W |
| Configuration | Standalone |
| Gate Charge(Qg) | 130nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 540pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7nF |
P-Channel 30V 120A 100W Surface Mount TO-252-2L