HXY MOSFET · FETs & Power MOSFETs · MPN IPC100N04S5-2R8-HXY
No reviews yet — be the first to review HXY MOSFET IPC100N04S5-2R8-HXY.
| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 40V |
| Gate Charge(Qg) | 64nC@4.5V |
| Output Capacitance(Coss) | 410pF |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 338pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.584nF |
| Type | N-Channel |
N-Channel 40V 130A Surface Mount DFN5x6-8L