HXY MOSFET · FETs & Power MOSFETs · MPN IPB070N06NG-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 75nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 242pF |
| Current - Continuous Drain(Id) | 90A |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.008nF |
| Type | N-Channel |
60V 90A 2.8V 83W 5.8mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS