HXY MOSFET · FETs & Power MOSFETs · MPN IPB027N10N3GATMA1-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 150nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 260A |
| Output Capacitance(Coss) | 1.505nF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 379W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.03nF |
| Type | N-Channel |
100V 260A 3V 379W 3.4mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS