HXY MOSFET · FETs & Power MOSFETs · MPN IPA65R190E6XKSA1-HXY
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| Output Capacitance(Coss) | 18pF |
|---|---|
| Pd - Power Dissipation | 52W |
| Configuration | - |
| Gate Charge(Qg) | 10.6nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| RDS(on) | 160mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 208pF |
52W 650V 3.5V 160mΩ@15V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS