HXY MOSFET · FETs & Power MOSFETs · MPN IPA65R099C6XKSA1-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 34nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 77pF |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 64W |
| RDS(on) | 125mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 803pF |
650V 24A 3V 64W 125mΩ 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS