HXY MOSFET · FETs & Power MOSFETs · MPN IMZA65R007M2HXKSA1-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 582nC |
| Drain to Source Voltage | 750V |
| Output Capacitance(Coss) | 958pF |
| Current - Continuous Drain(Id) | 355A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 833W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 8mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.854nF |
750V 355A 2.8V 833W 8mΩ 1 N-channel N-Channel TO-247H-4L Single FETs, MOSFETs RoHS