HXY MOSFET · FETs & Power MOSFETs · MPN IMW65R026M2HXKSA1-HXY
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| Gate Charge(Qg) | 74.5nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 99A |
| Output Capacitance(Coss) | 173pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 333W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 38mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.543nF |
650V 99A 3V 333W 38mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS