HXY MOSFET · FETs & Power MOSFETs · MPN IMW120R040M1HXKSA1-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 227nC |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 214pF |
| Current - Continuous Drain(Id) | 87.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 536W |
| RDS(on) | 60mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.726nF |
1.2kV 87.5A 5V 536W 60mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS