HXY MOSFET · FETs & Power MOSFETs · MPN IMBG120R090M1HXTMA1-HXY
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| Gate Charge(Qg) | 40nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 30A |
| Output Capacitance(Coss) | 57pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.9pF |
| RDS(on) | 85mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
| Type | N-Channel |
1.2kV 30A 136W Surface Mount TO-263-7L