HXY MOSFET · FETs & Power MOSFETs · MPN IAUCN10S7L040ATMA1-HXY
No reviews yet — be the first to review HXY MOSFET IAUCN10S7L040ATMA1-HXY.
| Output Capacitance(Coss) | 592pF |
|---|---|
| Pd - Power Dissipation | 176W |
| Configuration | Standalone |
| Gate Charge(Qg) | 69nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 3.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 19.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.102nF |
176W 100V 120A 3V 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS