HXY MOSFET · FETs & Power MOSFETs · MPN IAUC120N06S5L032ATMA1-HXY
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| Output Capacitance(Coss) | 2.188nF |
|---|---|
| Pd - Power Dissipation | 113W |
| Drain to Source Voltage | 60V |
| Configuration | Standalone |
| Gate Charge(Qg) | 74.37nC@10V |
| Current - Continuous Drain(Id) | 125A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.61nF |
113W 60V 125A 1.6V 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS