HXY MOSFET · FETs & Power MOSFETs · MPN HXYG500N06L
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| Output Capacitance(Coss) | 2.25nF |
|---|---|
| Pd - Power Dissipation | 349W |
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 150nC@10V |
| Configuration | Standalone |
| Current - Continuous Drain(Id) | 500A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 0.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.2nF |
349W 60V 500A 2.9V 0.9mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS