HXY MOSFET · FETs & Power MOSFETs · MPN HXY5N50D
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 14nC@10V |
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 42pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 1.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 582pF |
500V 5A 3.4V 83W 1.3Ω@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS