HXY MOSFET · FETs & Power MOSFETs · MPN HXY4N65D
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 14.5nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -45℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 610pF |
650V 4A 4V 75W 2.4Ω@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS