HXY MOSFET HXY4832S

HXY MOSFET · FETs & Power MOSFETs · MPN HXY4832S

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Specifications

ConfigurationStandalone
Gate Charge(Qg)17nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)12mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)910pF

Technical details

N-Channel Array 30V 10A 2W Surface Mount SOP-8

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