HXY MOSFET · FETs & Power MOSFETs · MPN HXY4559S
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 20.3nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 58.5pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 49.4pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.148nF |
60V 6A 1.6V 2.5W 40mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS