HXY MOSFET HXY4012GD

HXY MOSFET · FETs & Power MOSFETs · MPN HXY4012GD

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Specifications

ConfigurationCommon Drain
Gate Charge(Qg)24nC@10v
Drain to Source Voltage40V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)18mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.5nF

Technical details

N-Channel+P-Channel Array 40V 20A 40W Surface Mount TO-252-4L

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