HXY MOSFET HXY3422MI

HXY MOSFET · FETs & Power MOSFETs · MPN HXY3422MI

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Specifications

ConfigurationStandalone
Gate Charge(Qg)5.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)148pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation8W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)73mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)695pF

Technical details

N-Channel 60V 4.5A 8W Surface Mount SOT-23-3L

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