HXY MOSFET · FETs & Power MOSFETs · MPN HXY3416MI
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 8nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 87pF |
| RDS(on) | 17mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 660pF |
20V 6.5A 700mV 1.4W 17mΩ@4.5V 1 N-channel N-Channel SOT-23-3L Single FETs, MOSFETs RoHS