HXY MOSFET · FETs & Power MOSFETs · MPN HXY2309I
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 5.4nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 310pF |
60V 2A 1.5V 1W 160mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS