HXY MOSFET · FETs & Power MOSFETs · MPN HXY2305AI
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 10.2nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 114pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.31W |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF |
| RDS(on) | 35mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 857pF |
20V 5A 1V 1.31W 35mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS