HXY MOSFET · FETs & Power MOSFETs · MPN HTK11S10N1L
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Configuration | Standalone |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 42W |
| RDS(on) | 37mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.964nF |
N-Channel 100V 30A 42W Surface Mount TO-252-2L