HXY MOSFET HSTS9P3LLH6

HXY MOSFET · FETs & Power MOSFETs · MPN HSTS9P3LLH6

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Specifications

Drain to Source Voltage30V
ConfigurationStandalone
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)183pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)156pF
RDS(on)13mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.33nF

Technical details

P-Channel 30V 11A 3.7W Surface Mount SOP-8

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