HXY MOSFET · FETs & Power MOSFETs · MPN HSTD20NF10T4
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 137pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 52.1W |
| RDS(on) | 35mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.848nF |
N-Channel 100V 30A 52.1W TO-252-2L(DPAK)