HXY MOSFET · FETs & Power MOSFETs · MPN HSISH101DNT1GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 45nC@10V |
| Configuration | Standalone |
| Output Capacitance(Coss) | 529pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 31.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 487pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.32nF |
30V 70A 31.2W Surface Mount DFN-8L(3x3)