HXY MOSFET HSiR804DP

HXY MOSFET · FETs & Power MOSFETs · MPN HSiR804DP

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Specifications

ConfigurationStandalone
Drain to Source Voltage30V
Gate Charge(Qg)38nC@10V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)4.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.93nF

Technical details

N-Channel 30V 80A 37W Surface Mount DFN-8L(5x6)

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