HXY MOSFET HSI4153

HXY MOSFET · FETs & Power MOSFETs · MPN HSI4153

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Specifications

Drain to Source Voltage20V
ConfigurationStandalone
Gate Charge(Qg)-
Output Capacitance(Coss)7pF
Current - Continuous Drain(Id)800mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)180mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)50pF

Technical details

20V 800mA 700mV 150mW 180mΩ@4.5V 1 N-channel N-Channel SOT-523 Single FETs, MOSFETs RoHS

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