HXY MOSFET · FETs & Power MOSFETs · MPN HSI2367DST1GE3
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| Gate Charge(Qg) | 3.3nC@2.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Configuration | Standalone |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1W |
| RDS(on) | 60mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 405pF |
P-Channel 20V 3A 1W Surface Mount SOT-23