HXY MOSFET · FETs & Power MOSFETs · MPN HSi2321DS
No reviews yet — be the first to review HXY MOSFET HSi2321DS.
| Drain to Source Voltage | 20V |
|---|---|
| Configuration | Standalone |
| Gate Charge(Qg) | 7.8nC@4.5V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 48mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 740pF |
20V 4.2A 1.7W Surface Mount SOT-23