HXY MOSFET · FETs & Power MOSFETs · MPN HSI2318CDST1GE3
No reviews yet — be the first to review HXY MOSFET HSI2318CDST1GE3.
| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 40V |
| Gate Charge(Qg) | 5.8nC@10V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 1.56W |
| RDS(on) | 30mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 340pF |
N-Channel 40V 5A 1.56W Surface Mount SOT-23