HXY MOSFET · FETs & Power MOSFETs · MPN HSi2308DS
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 7.5nC@4.5V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 34pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 72mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 510pF |
60V 3A 1.7W Surface Mount SOT-23