HXY MOSFET HSI2102A

HXY MOSFET · FETs & Power MOSFETs · MPN HSI2102A

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Specifications

Drain to Source Voltage20V
ConfigurationStandalone
Gate Charge(Qg)-
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)55mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)300pF

Technical details

N-Channel 20V 2A 0.3W Surface Mount SOT-323

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