HXY MOSFET · FETs & Power MOSFETs · MPN HSCTWA35N65G2V
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| Gate Charge(Qg) | 96nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 49A |
| Output Capacitance(Coss) | 190pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 242W |
| RDS(on) | 49mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.823nF |
| Type | N-Channel |
650V 49A 4V 242W 49mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS