HXY MOSFET · FETs & Power MOSFETs · MPN HSCTW60N120G2
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 120nC |
| Current - Continuous Drain(Id) | 55A |
| Output Capacitance(Coss) | 171pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 278W |
| RDS(on) | 52mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.44nF |
| Type | N-Channel |
1.2kV 55A 4V 278W 52mΩ 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS