HXY MOSFET · FETs & Power MOSFETs · MPN HSCT3030AR
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| Gate Charge(Qg) | 172nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 359pF |
| Current - Continuous Drain(Id) | 97A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 429W |
| RDS(on) | 45mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.28nF |
| Type | N-Channel |
650V 97A 4V 429W 45mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS