HXY MOSFET HSCT20N120AG

HXY MOSFET · FETs & Power MOSFETs · MPN HSCT20N120AG

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)40nC
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)196mΩ
Number1 N-channel
Input Capacitance(Ciss)606pF
TypeN-Channel

Technical details

1.2kV 18A 4V 125W 196mΩ 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS

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