HXY MOSFET HS1195

HXY MOSFET · FETs & Power MOSFETs · MPN HS1195

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Specifications

ConfigurationStandalone
Gate Charge(Qg)12.6nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)14mΩ@10V
Number2 P-Channel
Input Capacitance(Ciss)1.345nF

Technical details

P-Channel 30V 8.5A 1.5W Surface Mount SOP-8

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