HXY MOSFET HRN1306LF

HXY MOSFET · Transistors (BJTs) · MPN HRN1306LF

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor6.11kΩ
typeNPN
Number1 NPN (Pre-Biased)
Resistor Ratio10
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.3V@5mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 200mW Surface Mount SOT-323(SC-70)

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