HXY MOSFET HPPMUT20V3

HXY MOSFET · FETs & Power MOSFETs · MPN HPPMUT20V3

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Specifications

Drain to Source Voltage20V
ConfigurationStandalone
Gate Charge(Qg)-
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation290mW
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)150mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)680pF

Technical details

20V 1.8A 0.29W Surface Mount SOT-323-3

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