HXY MOSFET HPMV30UN2

HXY MOSFET · FETs & Power MOSFETs · MPN HPMV30UN2

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Specifications

Drain to Source Voltage20V
ConfigurationStandalone
Gate Charge(Qg)-
Output Capacitance(Coss)164pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation350mW
RDS(on)22mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)137pF
Number1 N-channel
Input Capacitance(Ciss)630pF

Technical details

N-Channel 20V 6A 0.35W Surface Mount SOT-23

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