HXY MOSFET · FETs & Power MOSFETs · MPN HPMV213SN215
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| Gate Charge(Qg) | 9.7nC@10V |
|---|---|
| Configuration | Standalone |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 29pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 220mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 16.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 508pF |
N-Channel 100V 2A 1W Surface Mount SOT-23