HXY MOSFET HPHD97NQ03LT118

HXY MOSFET · FETs & Power MOSFETs · MPN HPHD97NQ03LT118

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Specifications

Drain to Source Voltage30V
ConfigurationStandalone
Gate Charge(Qg)11.1nC@4.5V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation54W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)180pF
Number1 N-channel
Input Capacitance(Ciss)1.16nF

Technical details

N-Channel 30V 80A 54W TO-252-2L(DPAK)

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