HXY MOSFET · FETs & Power MOSFETs · MPN HNVTFS5826NLTWG
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 22nC@10V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 930pF |
60V 40A 1.6V 30W 12mΩ@10V 1 N-channel N-Channel DFN3X3-8L Single FETs, MOSFETs RoHS