HXY MOSFET · FETs & Power MOSFETs · MPN HNVATS4A104PZT4G
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| Drain to Source Voltage | 30V |
|---|---|
| Configuration | Standalone |
| Gate Charge(Qg) | 60nC@10V |
| Output Capacitance(Coss) | 255pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 90W |
| RDS(on) | 7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.45nF |
P-Channel 30V 70A 90W Surface Mount TO-252-2L