HXY MOSFET · FETs & Power MOSFETs · MPN HNVATS4A103PZ
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 22nC@4.5V |
| Configuration | Standalone |
| Output Capacitance(Coss) | 310pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.215nF |
P-Channel 30V 50A 45W TO-252-2L(DPAK)