HXY MOSFET · FETs & Power MOSFETs · MPN HNTTFS5116PLTWG
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 6.1nC@4.5V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 49mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 585pF |
60V 20A 25W Surface Mount WDFN-8(3.3x3.3)