HXY MOSFET · FETs & Power MOSFETs · MPN HN2288
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 9.63nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 131pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF |
| RDS(on) | 10mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 940pF |
30V 30A 2.5V 1.5W 10mΩ@10V 2 N-Channel N-Channel DFN3x3-8L Single FETs, MOSFETs RoHS