HXY MOSFET · FETs & Power MOSFETs · MPN HN2199
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 5.5nC@4.5V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 76pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 10.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| RDS(on) | 19mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 593pF |
40V 30A 1.5V 10.8W 19mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel DFN5x6-8L Single FETs, MOSFETs RoHS